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SQD50P04-13L
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
100
80
60
V GS = 10 V thru 5 V
100
80
60
40
4V
40
20
20
25 °C
0
3V
0
T C = 125 °C
- 55 °C
0
3
6
9
12
15
0
2
4
6
8
10
0.05
0.04
0.03
0.02
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS = 4.5 V
V GS = 10 V
5000
4000
3000
2000
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C iss
0.01
1000
C rss
C oss
0.00
0
20
40
60
80
100
0
0
5
10
15
20
25
30
35
40
10
8
6
4
2
0
I D - Drain Current (A)
On-Resistance vs. Drain Current
I D = 50 A
V DS = 20 V
2.0
1.7
1.4
1.1
0.8
0.5
V DS - Drain-to-Source Voltage (V)
Capacitance
V GS = 10 V
I D = 30 A
0
10
20
30
40
50
60
- 50
- 25
0
25
50
75
100
125
150
175
Q g - Total Gate Charge (nC)
Gate Charge
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S11-2065-Rev. C, 24-Oct-11
3
Document Number: 65157
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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